Yoshinori IKEDA

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology
Hideaki KURATA  Satoshi NODA  Yoshitaka SASAGO  Kazuo OTSUGA  Tsuyoshi ARIGANE  Tetsufumi KAWAMURA  Takashi KOBAYASHI  Hitoshi KUME  Kazuki HOMMA  Teruhiko ITO  Yoshinori SAKAMOTO  Masahiro SHIMIZU  Yoshinori IKEDA  Osamu TSUCHIYA  Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/11/01
Vol. E90-C  No. 11  pp. 2146-2156
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
flash memory,  multilevel,  inversion-layer-bit-line,  AG-AND, 
  Summary |  Full Text:PDF (2.3MB)
A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput
Hideaki KURATA  Shunichi SAEKI  Takashi KOBAYASHI  Yoshitaka SASAGO  Tsuyoshi ARIGANE  Keiichi YOSHIDA  Yoshinori TAKASE  Takayuki YOSHITAKE  Osamu TSUCHIYA  Yoshinori IKEDA  Shunichi NARUMI  Michitaro KANAMITSU  Kazuto IZAWA  Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/10/01
Vol. E89-C  No. 10  pp. 1469-1479
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
flash memory,  AG-AND,  multilevel,  high speed programming,  CCIP, 
  Summary |  Full Text:PDF (2.1MB)