Yoshikazu FUJIMORI


A 11.3-µA Physical Activity Monitoring System Using Acceleration and Heart Rate
Motofumi NAKANISHI Shintaro IZUMI Mio TSUKAHARA Hiroshi KAWAGUCHI Hiromitsu KIMURA Kyoji MARUMOTO Takaaki FUCHIKAMI Yoshikazu FUJIMORI Masahiko YOSHIMOTO 
Publication:   
Publication Date: 2018/04/01
Vol. E101-C  No. 4  pp. 233-242
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
adaptive samplingnormally off computingphysical activity classificationsensor fusionSoC
 Summary | Full Text:PDF(2.4MB)

Highly Reliable Non-volatile Logic Circuit Technology and Its Application
Hiromitsu KIMURA Zhiyong ZHONG Yuta MIZUOCHI Norihiro KINOUCHI Yoshinobu ICHIDA Yoshikazu FUJIMORI 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 2014/09/01
Vol. E97-D  No. 9  pp. 2226-2233
Type of Manuscript:  INVITED PAPER (Special Section on Multiple-Valued Logic and VLSI Computing)
Category: 
Keyword: 
non-volatile logicnon-volatile flip-flopferroelectric capacitorhigh reliabilitydata protection
 Summary | Full Text:PDF(4.6MB)

Properties of Ferroelectric Memory with Ir System Materials as Electrodes
Naoki IZUMI Yoshikazu FUJIMORI Takashi NAKAMURA Akira KAMISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 513-517
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric thin filmsPb(Zr,Ti)O3FRAMfatigue propertyimprint propertyhysteresissol-gel methodIr system materialsSTCpoly-Si plugs
 Summary | Full Text:PDF(420.1KB)

Study of Ferroelectric Materials for Ferroelectric Memory FET
Yoshikazu FUJIMORI Naoki IZUMI Takashi NAKAMURA Akira KAMISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 572-576
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricthin filmMFMISlow dielectric constantsol-gelstrontium niobatestrontium tantalate niobatehysteresis
 Summary | Full Text:PDF(450.2KB)