Yasuro YAMANE


Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2000-2003
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recessInP-passivation layerHEMTbreakdown voltage
 Summary | Full Text:PDF(389.4KB)

50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
Kimikazu SANO Koichi MURATA Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/25
Vol. E83-C  No. 11  pp. 1788-1790
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
InP HEMTsdemultiplexerpackaged IC modulelightwave communications
 Summary | Full Text:PDF(1.5MB)

70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
Koichi MURATA Taiichi OTSUJI Eiichi SANO Shunji KIMURA Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/07/25
Vol. E83-C  No. 7  pp. 1166-1169
Type of Manuscript:  LETTER
Category: Integrated Electronics
Keyword: 
multiplexerdecisionmoduleInAlAs/InGaAs/InP HEMToptical communication
 Summary | Full Text:PDF(302.6KB)

InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
Eiichi SANO Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1879-1885
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Information and Communication System
Keyword: 
InPHEMTanalog ICdigital ICpackaging
 Summary | Full Text:PDF(2MB)

Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAsMESFETV-band amplifier
 Summary | Full Text:PDF(781KB)

A Design Technique for a High-Gain, 10-GHz Class-Bandwidth GaAs MESFET Amplifier IC Module
Noboru ISHIHARA Eiichi SANO Yuhki IMAI Hiroyuki KIKUCHI Yasuro YAMANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/04/25
Vol. E75-C  No. 4  pp. 452-460
Type of Manuscript:  Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
Category: 
Keyword: 
 Summary | Full Text:PDF(792.5KB)