Yasunori BITO

1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Fumio HARIMA  Yasunori BITO  Hidemasa TAKAHASHI  Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1104-1108
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
enhancement mode,  hetero-junction FETs,  power amplifiers, 
  Summary |  Full Text:PDF (484KB)
1.0 V Operation Power Heterojunction FET for Digital Cellular Phones
Takehiko KATO  Yasunori BITO  Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2  pp. 249-252
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
power amplifier,  heterojunction FET,  low voltage operation,  on-resistance, 
  Summary |  Full Text:PDF (675.8KB)
Single 1. 5 V Operation Power Amplifier MMIC with SrTiO3 Capacitors for 2. 4 GHz Wireless Applications
Takeshi B. NISHIMURA  Naotaka IWATA  Keiko YAMAGUCHI  Masatoshi TOMITA  Yasunori BITO  Koichi TAKEMURA  Yoichi MIYASAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/20
Vol. E81-C  No. 6  pp. 898-903
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
wireless LAN,  MMIC,  power amplifier,  heterojunction FET,  SrTiO3,  low voltage,  single voltage supply, 
  Summary |  Full Text:PDF (634.7KB)