Yasunobu ISHII


Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
Tetsuya SUEMITSU Tetsuyoshi ISHII Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1283-1288
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-speed devicesmillimeter wave FETsHEMTindium phosphide
 Summary | Full Text:PDF(496.5KB)

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
Yohtaro UMEDA Kazuo OSAFUNE Takatomo ENOKI Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7  pp. 1080-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
InPHEMTICinterconnectiondelaystatic frequency divider
 Summary | Full Text:PDF(1.3MB)

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 409-418
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InPHEMTICoptical communicationdelay
 Summary | Full Text:PDF(1.3MB)

Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
 Summary | Full Text:PDF(915.1KB)

Silicon Nitride Passivated Ultra Low Noise InAlAs/InGaAs HEMT's with n+-InGaAs/n+-InAlAs Cap Layer
Yohtaro UMEDA Takatomo ENOKI Kunihiro ARAI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/06/25
Vol. E75-C  No. 6  pp. 649-655
Type of Manuscript:  Special Section PAPER (Special Issue on MMIC Technology)
Category: 
Keyword: 
InGaAsHEMTlow noiseequivalent circuitInP
 Summary | Full Text:PDF(707.7KB)