Yasuhiro OKAMOTO


COGRE: A Novel Compact Logic Cell Architecture for Area Minimization
Masahiro IIDA Motoki AMAGASAKI Yasuhiro OKAMOTO Qian ZHAO Toshinori SUEYOSHI 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 2012/02/01
Vol. E95-D  No. 2  pp. 294-302
Type of Manuscript:  Special Section PAPER (Special Section on Reconfigurable Systems)
Category: Architecture
Keyword: 
reconfigurable logicCOGRENPN-equivalent classes
 Summary | Full Text:PDF(596.3KB)

High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
Akio WAKEJIMA Kohji MATSUNAGA Yuji ANDO Tatsuo NAKAYAMA Yasuhiro OKAMOTO Kazuki OTA Naotaka KURODA Masahiro TANOMURA Hironobu MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 929-936
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
GaN-FETamplifiermemory effectsbaseband impedancedigital predistortionW-CDMA
 Summary | Full Text:PDF(688.2KB)

Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs
Takashi INOUE Yuji ANDO Kensuke KASAHARA Yasuhiro OKAMOTO Tatsuo NAKAYAMA Hironobu MIYAMOTO Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2065-2070
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN heterojunction FETshort channeldelay-time analysisseries resistanceelectron high-field velocity
 Summary | Full Text:PDF(1.3MB)

Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain
Kohji MATSUNAGA Yasuhiro OKAMOTO Mikio KANAMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 744-749
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
power amplifierintermodulation distortionheterojunction FETlinearizer
 Summary | Full Text:PDF(648.7KB)

Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 746-750
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FEThigh breakdown voltageburied gate
 Summary | Full Text:PDF(474.3KB)