Toshihiro MATSUDA


Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12  pp. 1523-1530
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOS capacitorsSi-implantationthermal oxideI-V hysteresishysteresis windownonvolatile memory
 Summary | Full Text:PDF(1.7MB)

A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs
Toshihiro MATSUDA Yuya SUGIYAMA Keita NOHARA Kazuhiro MORITA Hideyuki IWATA Takashi OHZONE Takayuki MORISHITA Kiyotaka KOMOKU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8  pp. 1331-1337
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures (ICMTS2007))
Category: 
Keyword: 
CMOSsymmetryorientation dependencedrain currentsubstrate current
 Summary | Full Text:PDF(1.1MB)

A CMOS Temperature Sensor Circuit
Takashi OHZONE Tatsuaki SADAMOTO Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 895-902
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
CMOStemperature sensortemperature dependent voltagesubthreshold current
 Summary | Full Text:PDF(869.8KB)

A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width
Takashi OHZONE Eiji ISHII Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/02/01
Vol. E90-C  No. 2  pp. 515-522
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
CMOSFETreliabilityLDD-typechannel widthisolation
 Summary | Full Text:PDF(1.3MB)

A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET
Takashi OHZONE Kazuhiko OKADA Takayuki MORISHITA Kiyotaka KOMOKU Toshihiro MATSUDA Hideyuki IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/09/01
Vol. E89-C  No. 9  pp. 1351-1357
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
CMOSFETLDD-typesource/drain-resistancesheet resistance
 Summary | Full Text:PDF(997KB)

A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission
Toshihiro MATSUDA Hiroaki TAKEUCHI Akira MURAMATSU Hideyuki IWATA Takashi OHZONE Kyoji YAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 811-816
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFETphotoemissionhot carriergate length
 Summary | Full Text:PDF(1.1MB)

A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit
Toshihiro MATSUDA Ryuichi MINAMI Akira KANAMORI Hideyuki IWATA Takashi OHZONE Shinya YAMAMOTO Takashi IHARA Shigeki NAKAJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 1087-1093
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
CMOSvoltage referencethreshold-voltagelow power
 Summary | Full Text:PDF(953.5KB)

Visible Electroluminescence from MOS Capacitors with Si-Implanted SiO2
Toshihiro MATSUDA Masaharu KAWABE Hideyuki IWATA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11  pp. 1895-1904
Type of Manuscript:  Special Section PAPER (Special Issue on Electronic Displays)
Category: EL Displays
Keyword: 
MOS capacitorelectroluminescenceSi-implantationSiO2
 Summary | Full Text:PDF(1.3MB)

A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1125-1133
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structureMOSFEThot carrierphotoemission
 Summary | Full Text:PDF(1.8MB)

A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
Toshihiro MATSUDA Naoko MATSUYAMA Kiyomi HOSOI Etsumasa KAMEDA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4  pp. 593-601
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThot carriersphotoemissionjunction breakdown
 Summary | Full Text:PDF(527.4KB)