Toshifumi SATO


Two-Dimensional Simulation of Electric Field and Carrier Concentration of Low-Temperature N-Channel Poly-Si LDD TFTs
Yukisato NOGAMI Toshifumi SATOH Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 983-987
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
n-channel poly-Si LDD TFTdevice simulationelectric field distributioncarrier concentration distributionhot-carrier degradation
 Summary | Full Text:PDF(630.6KB)

Quantitative Evaluation of Luminance Nonuniformity "Mura" in LCDs Based on Just Noticeable Difference (JND) Contrast at Various Background Luminances
Tohru TAMURA Toshifumi SATOH Takayuki UCHIDA Takashi FURUHATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/10/01
Vol. E89-C  No. 10  pp. 1435-1440
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
image qualityLCDluminancenonuniformityJND contrast
 Summary | Full Text:PDF(501.5KB)