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Tomonori SEKIGUCHI

Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays Akira KOTABE Riichiro TAKEMURA Yoshimitsu YANAGAWA Tomonori SEKIGUCHI Kiyoo ITOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 594-599 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: DRAM, low voltage, sense amplifier, mid-point sensing,
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A Low-V_t Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing Satoru AKIYAMA Riichiro TAKEMURA Tomonori SEKIGUCHI Akira KOTABE Kiyoo ITOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 600-608 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: low-voltage DRAM, gated preamplifier, mid-point sensing, variations in threshold voltage,
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Long-Retention-Time, High-Speed DRAM Array with 12-F² Twin Cell for Sub 1-V Operation Riichiro TAKEMURA Kiyoo ITOH Tomonori SEKIGUCHI Satoru AKIYAMA Satoru HANZAWA Kazuhiko KAJIGAYA Takayuki KAWAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 758-764 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Memory Keyword: twin-cell DRAM array, write time, low voltage RAM, retention time, and plate-driven cell,
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A Robust Array Architecture for a Capacitorless MISS Tunnel-Diode Memory Satoru HANZAWA Takeshi SAKATA Tomonori SEKIGUCHI Hideyuki MATSUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/09/01 Vol. E86-C No. 9 pp. 1886-1893 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: emerging memory, MISS tunnel-diode, hierarchical bit-line structure, twin dummy-cell,
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A High-Endurance Read/Write Scheme for Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors Hiroki FUJISAWA Takeshi SAKATA Tomonori SEKIGUCHI Kazuyoshi TORII Katsutaka KIMURA Kazuhiko KAJIGAYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/06/01 Vol. E84-C No. 6 pp. 763-770 Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories) Category: FeRAMs Keyword: DRAM, ferroelectric memory, high speed, low-power, high-endurance,
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Calculation of the Potential Distribution around an Impurity-Atom-Wire--The Validity of the Thomas-Fermi Approximation-- Tomonori SEKIGUCHI Kazuhito FURUYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/12/20 Vol. E76-C No. 12 pp. 1842-1846 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: impurity-atom-wire, quantum wire, nanometer structure, screening effect, electron wave,
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