Tohru MOGAMI


Measurements and Simulation of Sensitivity of Differential-Pair Transistors against Substrate Voltage Variation
Satoshi TAKAYA Yoji BANDO Toru OHKAWA Toshiharu TAKARAMOTO Toshio YAMADA Masaaki SOUDA Shigetaka KUMASHIRO Tohru MOGAMI Makoto NAGATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6  pp. 884-893
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
mixed signal VLSI circuitsubstrate crosstalkon-chip noise monitoring
 Summary | Full Text:PDF(3MB)

On-Chip In-Place Measurements of Vth and Signal/Substrate Response of Differential Pair Transistors
Yoji BANDO Satoshi TAKAYA Toru OHKAWA Toshiharu TAKARAMOTO Toshio YAMADA Masaaki SOUDA Shigetaka KUMASHIRO Tohru MOGAMI Makoto NAGATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/01/01
Vol. E95-C  No. 1  pp. 137-145
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
on-chip monitorsubstrate noisedifferential amplifier
 Summary | Full Text:PDF(2.1MB)

On-Chip Single Tone Pseudo-Noise Generator for Analog IP Noise Tolerance Measurement
Masaaki SODA Yoji BANDO Satoshi TAKAYA Toru OHKAWA Toshiharu TAKARAMOTO Toshio YAMADA Shigetaka KUMASHIRO Tohru MOGAMI Makoto NAGATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/06/01
Vol. E94-C  No. 6  pp. 1024-1031
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
noisesine waveharmonic
 Summary | Full Text:PDF(1.7MB)

A Continuous-Time Waveform Monitoring Technique for On-Chip Power Noise Measurements in VLSI Circuits
Yoji BANDO Satoshi TAKAYA Toru OHKAWA Toshiharu TAKARAMOTO Toshio YAMADA Masaaki SOUDA Shigetaka KUMASHIRO Tohru MOGAMI Makoto NAGATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4  pp. 495-503
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
on-chip monitorpower supply noise
 Summary | Full Text:PDF(2.4MB)

Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System
Takakuni DOUSEKI Masashi YONEMARU Eiji IKUTA Akira MATSUZAWA Atsushi KAMEYAMA Shunsuke BABA Tohru MOGAMI Hakaru KYURAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4  pp. 437-447
Type of Manuscript:  INVITED PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
ultralow voltageultralow powerMTCMOS/SOIbatterylessambient energy
 Summary | Full Text:PDF(2.5MB)

Uniform Raised-Salicide Technology for High-Performance CMOS Devices
Hitoshi WAKABAYASHI Takeshi ANDOH Tohru MOGAMI Toru TATSUMI Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1104-1110
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
complementary metal oxide semiconductorsalicideraised salicidesilicon selective epitaxial growthpit
 Summary | Full Text:PDF(2MB)

Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Risho KOH Tohru MOGAMI Haruo KATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7  pp. 893-898
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SOIMOSFETfloating body effectsimulationapplicable voltage
 Summary | Full Text:PDF(491.5KB)

Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
Tohru MOGAMI Lars E. G. JOHANSSON Isami SAKAI Masao FUKUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 255-260
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
hot-carrier effectsboron penetrationsurface-channel PMOSFETsgate currentBF2
 Summary | Full Text:PDF(474.5KB)