Tetsuya SUEMITSU


Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
Amine EL MOUTAOUAKIL Tsuneyoshi KOMORI Kouhei HORIIKE Tetsuya SUEMITSU Taiichi OTSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1286-1289
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: THz Electronics
Keyword: 
terahertzplasmon resonanceemitterdual grating gate dimension
 Summary | Full Text:PDF(609.8KB)

InP HEMT Technology for High-Speed Logic and Communications
Tetsuya SUEMITSU Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 917-922
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
HEMTInPcutoff frequencyOEIC
 Summary | Full Text:PDF(990.1KB)

Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
Tetsuya SUEMITSU Tetsuyoshi ISHII Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1283-1288
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-speed devicesmillimeter wave FETsHEMTindium phosphide
 Summary | Full Text:PDF(496.5KB)

Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Kenji SHIOJIMA Naoteru SHIGEKAWA Tetsuya SUEMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12  pp. 1968-1970
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
GaNHEMTburied p-layercarrier confinement
 Summary | Full Text:PDF(136.1KB)

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 409-418
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: 
Keyword: 
InPHEMTICoptical communicationdelay
 Summary | Full Text:PDF(1.3MB)