Teruhiko HOSHIDA


Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions
Chenyue MA Hans Jürgen MATTAUSCH Masataka MIYAKE Takahiro IIZUKA Kazuya MATSUZAWA Seiichiro YAMAGUCHI Teruhiko HOSHIDA Akinori KINOSHITA Takahiko ARAKAWA Jin HE Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/10/01
Vol. E96-C  No. 10  pp. 1339-1347
Type of Manuscript:  PAPER
Category: Electronic Components
Keyword: 
NBTI effectinterface-statehole-trappingmodeling
 Summary | Full Text:PDF(3.6MB)

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
carrier dynamicslow voltagedisplacement currentcontinuity equationcarrier-transit delaynonquasi-static effectcompact MOSFET modeldriving capabilitydriftdiffusionsurface potentialcircuit simulation
 Summary | Full Text:PDF(1.7MB)