Takuya IMAMOTO

Source/Drain Engineering for High Performance Vertical MOSFET
Takuya IMAMOTO  Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 807-813
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical MOSFET,  volume inversion,  body channel,  gate-all-around,  source/drain profile,  floating body, 
  Summary |  Full Text:PDF
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process
Takuya IMAMOTO  Takeshi SASAKI  Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 724-729
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1/f noise,  flicker noise,  MOSFET,  SiON/Poly-Si Gate,  Random Telegraph Signal (RTS), 
  Summary |  Full Text:PDF
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation
Tetsuo ENDOH  Masashi KAMIYANAGI  Masakazu MURAGUCHI  Takuya IMAMOTO  Takeshi SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 743-750
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Current Controlled-MCML,  MCML,  Vth fluctuation,  stability,  MTJ, 
  Summary |  Full Text:PDF
Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
Takeshi SASAKI  Takuya IMAMOTO  Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 751-759
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k dielectric film,  high-k/metal gate stack,  mobility,  CMOS,  inverter, 
  Summary |  Full Text:PDF
Verification of Stable Circuit Operation of 180 nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation
Masashi KAMIYANAGI  Takuya IMAMOTO  Takeshi SASAKI  Hyoungjun NA  Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 760-766
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current controlled-MCML,  MCML,  Vth fluctuation,  stability,  NMOS,  PMOS, 
  Summary |  Full Text:PDF