Takashi FUJIOKA


A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
Seiki GOTO  Kenichi FUJII  Tetsuo KUNII  Satoshi SUZUKI  Hiroshi KAWATA  Shinichi MIYAKUNI  Naohito YOSHIDA  Susumu SAKAMOTO  Takashi FUJIOKA  Noriyuki TANINO  Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1936-1942
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
high-power FETHFETbase stationlow distortionmicrowave
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