Takahiro TSURUDA

SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories
Shigehiro KUGE  Fukashi MORISHITA  Takahiro TSURUDA  Shigeki TOMISHIMA  Masaki TSUKUDE  Tadato YAMAGATA  Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/07/20
Vol. E79-C  No. 7  pp. 997-1002
Type of Manuscript: Special Section PAPER (Special Issue on the 1995 Symposium on VLSI Circuits (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.31, No.4 April 1996))
Category: Memory
Keyword: 
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Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's
Yasuo YAMAGUCHI  Toshiyuki OASHI  Takahisa EIMORI  Toshiaki IWAMATSU  Shouichi MITAMOTO  Katsuhiro SUMA  Takahiro TSURUDA  Fukashi MORISHITA  Masakazu HIROSE  Hideto HIDAKA  Kazutami ARIMOTO  Kazuyasu FUJISHIMA  Yasuo INOUE  Tadashi NISHIMURA  Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/20
Vol. E79-C  No. 6  pp. 772-780
Type of Manuscript: INVITED PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
SOL,  SIMOX,  DRAM,  low-voltage operation, 
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