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Tae-Hyun HAN

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_0.88Ge_0.12 Heterostructure Channel Sang-Sik CHOI A-Ram CHOI Jae-Yeon KIM Jeon-Wook YANG Yong-Woo HWANG Tae-Hyun HAN Deok Ho CHO Kyu-Hwan SHIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 716-720 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SiGe, MOSFET, PD SOI, stress effect,
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Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films A-Ram CHOI Sang-Sik CHOI Byung-Guan PARK Dongwoo SUH Gyungock KIM Jin-Tae KIM Jin-Soo CHOI Deok-Ho CHO Tae-Hyun HAN Kyu-Hwan SHIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 767-771 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SiGe, SEG, aspect ratio, RPCVD,
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