Suehiro SUGITANI

Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA  Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1212-1217
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaN,  HEMT,  threshold voltage,  piezoelectric effects,  film stress, 
  Summary |  Full Text:PDF (585.4KB)
Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI  Suehiro SUGITANI  Yoshino K. FUKAI  Yasuro YAMANE  Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2000-2003
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recess,  InP-passivation layer,  HEMT,  breakdown voltage, 
  Summary |  Full Text:PDF (391.9KB)
Quick Development of Multifunctional MMICs by Using Three-Dimensional Masterslice MMIC Technology
Ichihiko TOYODA  Makoto HIRANO  Masami TOKUMITSU  Yuhki IMAI  Kenjiro NISHIKAWA  Kenji KAMOGAWA  Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1951-1959
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
three-dimensional,  MMIC,  masterslice,  LMDS,  quick development,  down-converter, 
  Summary |  Full Text:PDF (1.8MB)