Stephen A. PARKE


Fault-Tolerant Designs for 256 Mb DRAM
Toshiaki KIRIHATA  Yohji WATANABE  Hing WONG  John K. DEBROSSE  Munehiro YOSHIDA  Daisuke KATO  Shuso FUJII  Matthew R. WORDEMAN  Peter POECHMUELLER  Stephen A. PARKE  Yoshiaki ASAO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/07/20
Vol. E79-C  No. 7  pp. 969-977
Type of Manuscript: Special Section PAPER (Special Issue on the 1995 Symposium on VLSI Circuits (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.31, No.4 April 1996))
Category: Memory
Keyword: 
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