Shusuke YOSHIMOTO


A 28-nm 484-fJ/writecycle 650-fJ/readcycle 8T Three-Port FD-SOI SRAM for Image Processor
Haruki MORI Yohei UMEKI Shusuke YOSHIMOTO Shintaro IZUMI Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/08/01
Vol. E99-C  No. 8  pp. 901-908
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power and High-Speed Chips)
Category: 
Keyword: 
image memorymulti-port SRAM8TFD-SOI28-nmmajority logic
 Summary | Full Text:PDF(1.6MB)

STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier
Yohei UMEKI Koji YANAGIDA Shusuke YOSHIMOTO Shintaro IZUMI Masahiko YOSHIMOTO Hiroshi KAWAGUCHI Koji TSUNODA Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/12/01
Vol. E97-A  No. 12  pp. 2411-2417
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
STT-MRAMlow-voltageprocess-variation-tolerant
 Summary | Full Text:PDF(3.7MB)

Soft-Error Resilient and Margin-Enhanced N-P Reversed 6T SRAM Bitcell
Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/09/01
Vol. E97-A  No. 9  pp. 1945-1951
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
robust SRAMsoft error rateneutron particlesingle bit upsetmultiple cell upsetnucleus reaction
 Summary | Full Text:PDF(1.9MB)

Multiple-Cell-Upset Tolerant 6T SRAM Using NMOS-Centered Cell Layout
Shusuke YOSHIMOTO Shunsuke OKUMURA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2013/07/01
Vol. E96-A  No. 7  pp. 1579-1585
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
SRAMsoft error rate (SER)multiple cell upset (MCU)neutron particletwin welltriple well
 Summary | Full Text:PDF(2.6MB)

A 128-bit Chip Identification Generating Scheme Exploiting Load Transistors' Variation in SRAM Bitcells
Shunsuke OKUMURA Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/12/01
Vol. E95-A  No. 12  pp. 2226-2233
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
SRAMchip IDphysical unclonable function (PUF)
 Summary | Full Text:PDF(1.9MB)

Multiple-Bit-Upset and Single-Bit-Upset Resilient 8T SRAM Bitcell Layout with Divided Wordline Structure
Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Vol. E95-C  No. 10  pp. 1675-1681
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SRAMsoft errormultiple-bit upset (MBU)single-event upset (SEU)error correction coding (ECC)alpha particleneutron particle
 Summary | Full Text:PDF(2.6MB)

Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process
Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Koji NII Masahiko YOSHIMOTO Hiroshi KAWAGUCHI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/08/01
Vol. E95-A  No. 8  pp. 1359-1365
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
SRAMsingle-event upset (SEU)bit error rate (BER)soft error rate (SER)neutron particlealpha particle
 Summary | Full Text:PDF(4MB)

A 0.15-µm FD-SOI Substrate Bias Control SRAM with Inter-Die Variability Compensation Scheme
Shunsuke OKUMURA Hidehiro FUJIWARA Kosuke YAMAGUCHI Shusuke YOSHIMOTO Masahiko YOSHIMOTO Hiroshi KAWAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 579-585
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
SRAMFD-SOIInter-die variation
 Summary | Full Text:PDF(1.8MB)

A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme
Shusuke YOSHIMOTO Masaharu TERADA Shunsuke OKUMURA Toshikazu SUZUKI Shinji MIYANO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 572-578
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
SRAM8Tlow energydisturbhalf selectwrite back
 Summary | Full Text:PDF(1.9MB)

7T SRAM Enabling Low-Energy Instantaneous Block Copy and Its Application to Transactional Memory
Shunsuke OKUMURA Yuki KAGIYAMA Yohei NAKATA Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2011/12/01
Vol. E94-A  No. 12  pp. 2693-2700
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
SRAM DMAtransactional memorycheckpoint and recoverymulti-core processor
 Summary | Full Text:PDF(3.2MB)