Shunsuke OKUMURA


A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation
Yohei NAKATA Yuta KIMI Shunsuke OKUMURA Jinwook JUNG Takuya SAWADA Taku TOSHIKAWA Makoto NAGATA Hirofumi NAKANO Makoto YABUUCHI Hidehiro FUJIWARA Koji NII Hiroyuki KAWAI Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/04/01
Vol. E97-C  No. 4  pp. 332-341
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
design for robustnesscachevariation tolerance7T/14T SRAM
 Summary | Full Text:PDF(4.6MB)

Multiple-Cell-Upset Tolerant 6T SRAM Using NMOS-Centered Cell Layout
Shusuke YOSHIMOTO Shunsuke OKUMURA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2013/07/01
Vol. E96-A  No. 7  pp. 1579-1585
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
SRAMsoft error rate (SER)multiple cell upset (MCU)neutron particletwin welltriple well
 Summary | Full Text:PDF(2.6MB)

Reconfiguring Cache Associativity: Adaptive Cache Design for Wide-Range Reliable Low-Voltage Operation Using 7T/14T SRAM
Jinwook JUNG Yohei NAKATA Shunsuke OKUMURA Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Vol. E96-C  No. 4  pp. 528-537
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
low-voltage adaptive cache designreconfiguring associativitydynamic voltage frequency scaling7T/14T SRAM
 Summary | Full Text:PDF(2.6MB)

A 128-bit Chip Identification Generating Scheme Exploiting Load Transistors' Variation in SRAM Bitcells
Shunsuke OKUMURA Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/12/01
Vol. E95-A  No. 12  pp. 2226-2233
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
SRAMchip IDphysical unclonable function (PUF)
 Summary | Full Text:PDF(1.9MB)

Multiple-Bit-Upset and Single-Bit-Upset Resilient 8T SRAM Bitcell Layout with Divided Wordline Structure
Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Vol. E95-C  No. 10  pp. 1675-1681
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SRAMsoft errormultiple-bit upset (MBU)single-event upset (SEU)error correction coding (ECC)alpha particleneutron particle
 Summary | Full Text:PDF(2.6MB)

Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process
Shusuke YOSHIMOTO Takuro AMASHITA Shunsuke OKUMURA Koji NII Masahiko YOSHIMOTO Hiroshi KAWAGUCHI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2012/08/01
Vol. E95-A  No. 8  pp. 1359-1365
Type of Manuscript:  PAPER
Category: Reliability, Maintainability and Safety Analysis
Keyword: 
SRAMsingle-event upset (SEU)bit error rate (BER)soft error rate (SER)neutron particlealpha particle
 Summary | Full Text:PDF(4MB)

A 0.15-µm FD-SOI Substrate Bias Control SRAM with Inter-Die Variability Compensation Scheme
Shunsuke OKUMURA Hidehiro FUJIWARA Kosuke YAMAGUCHI Shusuke YOSHIMOTO Masahiko YOSHIMOTO Hiroshi KAWAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 579-585
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
SRAMFD-SOIInter-die variation
 Summary | Full Text:PDF(1.8MB)

A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme
Shusuke YOSHIMOTO Masaharu TERADA Shunsuke OKUMURA Toshikazu SUZUKI Shinji MIYANO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 572-578
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
SRAM8Tlow energydisturbhalf selectwrite back
 Summary | Full Text:PDF(1.9MB)

7T SRAM Enabling Low-Energy Instantaneous Block Copy and Its Application to Transactional Memory
Shunsuke OKUMURA Yuki KAGIYAMA Yohei NAKATA Shusuke YOSHIMOTO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2011/12/01
Vol. E94-A  No. 12  pp. 2693-2700
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Circuit Design
Keyword: 
SRAM DMAtransactional memorycheckpoint and recoverymulti-core processor
 Summary | Full Text:PDF(3.2MB)

A Dependable SRAM with 7T/14T Memory Cells
Hidehiro FUJIWARA Shunsuke OKUMURA Yusuke IGUCHI Hiroki NOGUCHI Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/04/01
Vol. E92-C  No. 4  pp. 423-432
Type of Manuscript:  Special Section PAPER (Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era)
Category: 
Keyword: 
SRAMdependabilityquality of a bit
 Summary | Full Text:PDF(1.5MB)

A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing
Hiroki NOGUCHI Yusuke IGUCHI Hidehiro FUJIWARA Shunsuke OKUMURA Yasuhiro MORITA Koji NII Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4  pp. 543-552
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
8T SRAM cell10T SRAM celllow-power SRAMnon-precharge SRAMtwo-port SRAMvideo processing
 Summary | Full Text:PDF(2.1MB)