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Shun-ichiro OHMI
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO
Hiroshi ISHIWARA
Shun-ichiro OHMI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C
No. 5
pp. 885-890
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
pentacene,
OFETs,
high-k,
grain size,
HfON,
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Summary |
Full Text:PDF
(2.2MB)
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Modulation of PtSi Work Function by Alloying with Low Work Function Metal
Jun GAO
Jumpei ISHIKAWA
Shun-ichiro OHMI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C
No. 5
pp. 775-779
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
PtSi,
monosilicide,
alloy,
work function,
SWC-anneal,
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Summary |
Full Text:PDF
(959.3KB)
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A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels
Shun-ichiro OHMI
Tetsushi SAKAI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5
pp. 994-999
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword:
twin-channel,
self-align,
SOI,
Ω-gate,
SiN,
wet etching,
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Summary |
Full Text:PDF
(1.6MB)
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Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)
Shun-ichiro OHMI
Go YAMANAKA
Tetsushi SAKAI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C
No. 1
pp. 24-29
Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category:
Keyword:
high-κ,
AlON,
ECR,
sputtering,
oxidation,
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Summary |
Full Text:PDF
(1.3MB)
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Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation