Shouhei SEKI

Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs
Shinichi HOSHI  Toshiharu MARUI  Masanori ITOH  Yoshiaki SANO  Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1052-1056
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN-HEMTs,  current collapse,  Si3N4 passivation film,  NH3-plasma pretreatment, 
  Summary |  Full Text:PDF (843.8KB)
1.4 GHz Natural Air-Cooling GaAs Standard Cell LSIs for 10 Gbit/s Optical Communication Systems
Yasunori OGAWA  Kuniichi IKEMURA  Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/20
Vol. E79-C  No. 4  pp. 489-495
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
GaAs,  DCFL,  SDH,  standard cell,  natural air-cooling, 
  Summary |  Full Text:PDF (723.9KB)
A GaAs 88 Self-Routing Switch LSI for ATM Switching System
Shouhei SEKI  Hiroyuki YAMADA  Masanori TSUNOTANI  Yoshiaki SANO  Yasushi KAWAKAMI  Masahiro AKIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/20
Vol. E75-C  No. 10  pp. 1127-1132
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
GaAs,  B-ISDN,  ATM,  hardware switch, 
  Summary |  Full Text:PDF (749.6KB)