Shoji SHUKURI


CMOS Process Compatible ie-Flash (Inverse Gate Electrode Flash) Technology for System-on-a Chip
Shoji SHUKURI Kazumasa YANAGISAWA Koichiro ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 734-739
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: Flash Memories
Keyword: 
ie-FlashEPROMfuse and redundancy
 Summary | Full Text:PDF(1005.6KB)

Material Representations and Algorithms for Nanometer Lithography Simulation
Edward W. SCHECKLER Taro OGAWA Shoji SHUKURI Eiji TAKEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 98-105
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
lithography simulationpattern fluctuation PMMASAL-601electron beam
 Summary | Full Text:PDF(766.7KB)

Recessed Memory Array Technology for a Double Cylindrical Stacked Capacitor Cell of 256M DRAM
Kazuhiko SAGARA Tokuo KURE Shoji SHUKURI Jiro YAGAMI Norio HASEGAWA Hidekazu GOTO Hisaomi YAMASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/25
Vol. E75-C  No. 11  pp. 1313-1322
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
recessed memory arraystacked capacitor cell256 MDRAM
 Summary | Full Text:PDF(1.5MB)