Shohei SEKI


Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
Hideyuki OKITA  Toshiharu MARUI  Shinichi HOSHI  Masanori ITOH  Fumihiko TODA  Yoshiaki MORINO  Isao TAMAI  Yoshiaki SANO  Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 686-690
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlGaN/GaN HEMTscurrent collapseSiNpassivation filmthermal CVD
  Summary |  Full Text:PDF (948.6KB)

Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
Toshiharu MARUI  Shinich HOSHI  Masanori ITOH  Isao TAMAI  Fumihiko TODA  Hideyuki OKITA  Yoshiaki SANO  Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1009-1014
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
AlGaN/GaN HEMTsthermal CVD SiNcurrent collapsepassivation filmgate insulator
  Summary |  Full Text:PDF (849.7KB)