Shingo NOHARA


Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
Toshihiro MATSUDA  Shinsuke ISHIMARU  Shingo NOHARA  Hideyuki IWATA  Kiyotaka KOMOKU  Takayuki MORISHITA  Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12  pp. 1523-1530
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOS capacitorsSi-implantationthermal oxideI-V hysteresishysteresis windownonvolatile memory
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