Satoshi ITOH


100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions
Mitiko MIURA-MATTAUSCH  Hiroaki UENO  Hans Juergen MATTAUSCH  Keiichi MORIKAWA  Satoshi ITOH  Akiyoshi KOBAYASHI  Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6  pp. 1009-1021
Type of Manuscript: INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
MOSFET modelsurface potentialdevice phenomenaRF applications
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