Satoshi HOSOKAWA

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
Shizunori MATSUMOTO  Hiroaki UENO  Satoshi HOSOKAWA  Toshihiko KITAMURA  Mitiko MIURA-MATTAUSCH  Hans Jurgen MATTAUSCH  Tatsuya OHGURO  Shigetaka KUMASHIRO  Tetsuya YAMAGUCHI  Kyoji YAMASHITA  Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/02/01
Vol. E88-C  No. 2  pp. 247-254
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
100 nm-MOSFET,  1/f noise,  measurement,  modeling, 
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