Satoshi ARAGAKI


A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell
Satoshi ARAGAKI Takahiro HANYU Tatsuo HIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11  pp. 1649-1656
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memories)
Category: Application Specific Memory
Keyword: 
content-addressable memorymultiple-valued logicfloating-gate MOSthreshold functionlogic-value conversionrelational search operation
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