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Sadao NAKASHIMA
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High-Quality Low-Dose SIMOX Wafers
Sadao NAKASHIMA
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/20
Vol. E80-C
No. 3
pp. 364-369
Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword:
SOI,
SIMOX,
annealing,
oxidation,
Si,
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Summary |
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SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen
Sadao NAKASHIMA
Katsutoshi IZUMI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/20
Vol. E75-C
No. 12
pp. 1415-1420
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword:
SIMOX,
implantation,
dislocation,
oxygen,
SOI,
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Summary |
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Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX
Yasuhisa OMURA
Sadao NAKASHIMA
Katsutoshi IZUMI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/20
Vol. E75-C
No. 12
pp. 1491-1497
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword:
CMOS,
SOI,
SIMOX,
ultrathin,
high speed,
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Summary |
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