Ryo HATTORI

A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module
Teruyuki SHIMURA  Tomoyuki ASADA  Satoshi SUZUKI  Takeshi MIURA  Jun OTSUJI  Ryo HATTORI  Yukio MIYAZAKI  Kazuya YAMAMOTO  Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7  pp. 1495-1501
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
GSM/EDGE dual mode,  power amplifier module,  InGaP HBT,  diode switch,  Rx-noise, 
  Summary |  Full Text:PDF (1.2MB)
Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures
Hideo TAKEUCHI  Yoshitsugu YAMAMOTO  Ryo HATTORI  Takahide ISHIKAWA  Masaaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2015-2021
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaAs/AlGaAs heterostructures,  photoreflectance,  Franz-Keldysh oscillations, 
  Summary |  Full Text:PDF (510.8KB)
Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers
Akira INOUE  Shigenori NAKATSUKA  Satoshi SUZUKI  Kazuya YAMAMOTO  Teruyuki SHIMURA  Ryo HATTORI  Yasuo MITSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8  pp. 1451-1457
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
maximum operating region,  measurement,  waveform,  power amplifier,  HBT, 
  Summary |  Full Text:PDF (731.2KB)
Electromigration and Diffusion of Gold in GaAs IC Interconnections
Akira OHTA  Kotaro YAJIMA  Norio HIGASHISAKA  Tetsuya HEIMA  Takayuki HISAKA  Ryo HATTORI  Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11  pp. 1932-1939
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
electromigration,  diffusion,  GaAs IC,  high temperature,  high current density, 
  Summary |  Full Text:PDF (2MB)
High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
Teruyuki SHIMURA  Takeshi MIURA  Yutaka UNEME  Hirofumi NAKANO  Ryo HATTORI  Mutsuyuki OTSUBO  Kazutomi MORI  Akira INOUE  Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 740-745
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction bipolar transistor,  digital cellular phone,  individual thermal shunt,  emitter air-bridge,  bias mode, 
  Summary |  Full Text:PDF (590KB)