Riichiro TAKEMURA


0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMs
Akira KOTABE Kiyoo ITOH Riichiro TAKEMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 555-563
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
0.5-V 25-nm 6-T SRAM cellboosted word voltageFD-MOSFETsrepairworst design
 Summary | Full Text:PDF(1.8MB)

Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays
Akira KOTABE Riichiro TAKEMURA Yoshimitsu YANAGAWA Tomonori SEKIGUCHI Kiyoo ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 594-599
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
DRAMlow voltagesense amplifiermid-point sensing
 Summary | Full Text:PDF(2.3MB)

A Low-Vt Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing
Satoru AKIYAMA Riichiro TAKEMURA Tomonori SEKIGUCHI Akira KOTABE Kiyoo ITOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 600-608
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
low-voltage DRAMgated preamplifiermid-point sensingvariations in threshold voltage
 Summary | Full Text:PDF(2MB)

Fluctuation Tolerant Charge-Integration Read Scheme for Ultrafast DNA Sequencing with Nanopore Device
Kazuo ONO Yoshimitsu YANAGAWA Akira KOTABE Riichiro TAKEMURA Tatsuo NAKAGAWA Tomio IWASAKI Takayuki KAWAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 651-660
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
DNAsequencenanoporetime-integration read
 Summary | Full Text:PDF(3.5MB)

Long-Retention-Time, High-Speed DRAM Array with 12-F2 Twin Cell for Sub 1-V Operation
Riichiro TAKEMURA Kiyoo ITOH Tomonori SEKIGUCHI Satoru AKIYAMA Satoru HANZAWA Kazuhiko KAJIGAYA Takayuki KAWAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4  pp. 758-764
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Memory
Keyword: 
twin-cell DRAM arraywrite timelow voltage RAMretention timeand plate-driven cell
 Summary | Full Text:PDF(1.6MB)

Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes Including Coherent and Incoherent Tunneling Processes
Riichiro TAKEMURA Michihiko SUHARA Yasuyuki MIYAMOTO Kazuhito FURUYA Yuji NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1525-1529
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
triple-barrier resonant tunneling diodesphase coherent lengthcoherent tunneling
 Summary | Full Text:PDF(459.6KB)