Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3
pp. 276-283
Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
atomistic,
diffusion,
activation,
doping fluctuations,
silicon,
|
