Norio SADACHIKA


Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design
Norio SADACHIKA Shu MIMURA Akihiro YUMISAKI Kou JOHGUCHI Akihiro KAYA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/03/01
Vol. E94-C  No. 3  pp. 361-367
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
circuit simulationcompact modelDFMreliability
 Summary | Full Text:PDF(1.3MB)

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/06/01
Vol. E92-C  No. 6  pp. 777-784
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
accumulation-modeMOS varactorcarrier-transit delaynonquasi-static effectcompact modelsurface potentialcircuit simulationLC-VCOfrequency-tuning rangeFTRoscillation amplitude
 Summary | Full Text:PDF(823.2KB)

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
carrier dynamicslow voltagedisplacement currentcontinuity equationcarrier-transit delaynonquasi-static effectcompact MOSFET modeldriving capabilitydriftdiffusionsurface potentialcircuit simulation
 Summary | Full Text:PDF(1.7MB)

A PN Junction-Current Model for Advanced MOSFET Technologies
Ryosuke INAGAKI Norio SADACHIKA Mitiko MIURA-MATTAUSCH Yasuaki INOUE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2009/04/01
Vol. E92-A  No. 4  pp. 983-989
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
HiSIMPN junction currentdiode currentsurface potential
 Summary | Full Text:PDF(973.9KB)

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8  pp. 1379-1381
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
double gate MOSFETHiSIMcircuit simulationvolume inversion
 Summary | Full Text:PDF(206.6KB)