Nobuhiro SUZUKI


Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
Takashi SUEMASU Yoshifumi KOHNO Nobuhiro SUZUKI Masahiro WATANABE Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1450-1454
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
resonant tunneling transistormetal-insulator heterostructureCaF2CoSi2transfer efficiency
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