Nobuhide YOSHIDA


Low-Voltage, Low-Power, High-Speed 0.25-µm GaAs HEMT Delay Flip-Flops
Tadayoshi ENOMOTO Atsunori HIROBE Masahiro FUJII Nobuhide YOSHIDA Shuji ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/25
Vol. E83-C  No. 11  pp. 1776-1787
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
GaAsHEMTdelay latchdelay flip-floppower dissipation
 Summary | Full Text:PDF(3.2MB)

ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8:1 Multiplexer and 1:8 Demultiplexer
Nobuhide YOSHIDA Masahiro FUJII Takao ATSUMO Keiichi NUMATA Shuji ASAI Michihisa KOHNO Hirokazu OIKAWA Hiroaki TSUTSUI Tadashi MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1992-1999
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
multiplexerdemultiplexerGaAs10 Gb/sECL-compatiblelow power consumption
 Summary | Full Text:PDF(2.6MB)

0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs
Shigeki WADA Masatoshi TOKUSHIMA Masaoki ISHIKAWA Nobuhide YOSHIDA Masahiro FUJII Tadashi MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 491-497
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
GaAsheterojunction FETY-shaped gateDCFLlow supply voltage
 Summary | Full Text:PDF(378.8KB)