Naoyuki SHIGYO


Simulation Technique of Heating by Contact Resistance for ESD Protection Device
Kazuya MATSUZAWA Hirobumi KAWASHIMA Toyoaki MATSUHASHI Naoyuki SHIGYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 404-408
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
ESDcontact resistancesimulationheating
 Summary | Full Text:PDF(862.4KB)

Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs
Kazuya MATSUZAWA Minoru TAKAHASHI Makoto YOSHIMI Naoyuki SHIGYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1477-1483
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
Keyword: 
SOIenergy transportvelocity overshoothot carrier
 Summary | Full Text:PDF(532KB)

An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
Naoyuki SHIGYO Noritoshi KONISHI Hideki SATAKE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 156-160
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
bandgap narrowingdevice simulationbipolar device
 Summary | Full Text:PDF(432.8KB)

TRIMEDES: A Triangular Mesh Device Simulator Linked with Topography/Process Simulation
Naoyuki SHIGYO Koichi SATO Koichi KATO Tetsunori WADA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/10/25
Vol. E71-E  No. 10  pp. 992-999
Type of Manuscript:  PAPER
Category: Semiconductors; Materials and Devices
Keyword: 
 Summary | Full Text:PDF(632.2KB)

Triangle Mesh Device Simulator: TRITON
Naoyuki SHIGYO Koichi SATO Koichi KATO Tetsunori WADA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/04/25
Vol. E70-E  No. 4  pp. 236-238
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category: Semiconductor Devices and Integrated Circuits
Keyword: 
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Three-Dimensional Simulation of Hot Carrier Effects in Submicron MOSFETs
Naoyuki SHIGYO Shinji ONGA Makoto YOSHIMI Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 248-250
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits
Keyword: 
 Summary | Full Text:PDF(176.3KB)