Naoki HARA

Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter
Yasuhiro NAKASHA  Naoki HARA  Kiyomichi ARAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Vol. E94-C  No. 10  pp. 1557-1564
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
Keyword: 
impulse radio,  millimeter-wave,  pulse generator,  band-pass filter,  jitter,  intersymbol interference, 
  Summary |  Full Text:PDF (1.2MB)
Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems
Toshihide SUZUKI  Yasuhiro NAKASHA  Hideki KANO  Masaru SATO  Satoshi MASUDA  Ken SAWADA  Kozo MAKIYAMA  Tsuyoshi TAKAHASHI  Tatsuya HIROSE  Naoki HARA  Masahiko TAKIGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1916-1922
Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
InP HEMT,  MUX,  DEMUX,  D-FF,  amplifier,  ultra high speed,  optical communication system, 
  Summary |  Full Text:PDF (1.6MB)
InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA  Yasuhiro NAKASHA  Toshihide KIKKAWA  Kazukiyo JOSHIN  Yuu WATANABE  Hitoshi TANAKA  Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1294-1299
Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaP-channel FET,  high breakdown voltage,  high operating voltage,  low distortion, 
  Summary |  Full Text:PDF (604.9KB)
0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA  Tamio SAITO  Hideyuki OIKAWA  Yoji OHASHI  Yuji AWANO  Masayuki ABE  Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/20
Vol. E81-C  No. 6  pp. 876-881
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
mm-wave,  MMIC,  HEMT,  InGaP,  low noise amplifier, 
  Summary |  Full Text:PDF (627.2KB)
Nonalloyed Ohmic Contacts for HEMTs Using n+-lnGaAs Layers Grown by MOVPE
Mizuhisa NIHEI  Naoki HARA  Haruyoshi SUEHIRO  Shigeru KURODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/20
Vol. E77-C  No. 9  pp. 1431-1436
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
nonalloyed ohmic contact,  n+-InGaAs,  MOVPE,  HEMT, 
  Summary |  Full Text:PDF (577.6KB)
N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA  Shigeru KURODA  Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/20
Vol. E75-C  No. 10  pp. 1165-1171
Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMT,  InGaAs,  Schottky junction,  DCEL,  dry etching, 
  Summary |  Full Text:PDF (560.7KB)