IEICE SEARCH SYSTEM

Mitiko MIURA-MATTAUSCH

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 744-751 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-voltage MOSFET, LDMOS, HiSIM, trench-gate MOSFET compact model,
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Compact Modeling of Expansion Effects in LDMOS Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/11/01 Vol. E95-C No. 11 pp. 1817-1823 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-voltage MOSFETs, breakdown, high-electric-field phenomena, compact model, surface potential,
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Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions Masataka MIYAKE Junichi NAKASHIMA Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/10/01 Vol. E95-C No. 10 pp. 1682-1688 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: high-level injection, p-i-n diode, reverse recovery, carrier distribution, compact model, circuit simulation, SPICE,
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Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design Norio SADACHIKA Shu MIMURA Akihiro YUMISAKI Kou JOHGUCHI Akihiro KAYA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/03/01 Vol. E94-C No. 3 pp. 361-367 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: circuit simulation, compact model, DFM, reliability,
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Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/06/01 Vol. E92-C No. 6 pp. 777-784 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: accumulation-mode, MOS varactor, carrier-transit delay, nonquasi-static effect, compact model, surface potential, circuit simulation, LC-VCO, frequency-tuning range, FTR, oscillation amplitude,
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Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 608-615 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: carrier dynamics, low voltage, displacement current, continuity equation, carrier-transit delay, nonquasi-static effect, compact MOSFET model, driving capability, drift, diffusion, surface potential, circuit simulation,
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A PN Junction-Current Model for Advanced MOSFET Technologies Ryosuke INAGAKI Norio SADACHIKA Mitiko MIURA-MATTAUSCH Yasuaki INOUE
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2009/04/01 Vol. E92-A No. 4 pp. 983-989 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa) Category: Keyword: HiSIM, PN junction current, diode current, surface potential,
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Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/08/01 Vol. E91-C No. 8 pp. 1379-1381 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: double gate MOSFET, HiSIM, circuit simulation, volume inversion,
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Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 pp. 885-894 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MOSFET, shot noise, high frequency noise, device simulation, sub-threshold current,
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A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential Dondee NAVARRO Takeshi MIZOGUCHI Masami SUETAKE Kazuya HISAMITSU Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/05/01 Vol. E88-C No. 5 pp. 1079-1086 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: pinch-off region, channel-length modulation, overlap capacitance, surface-potential-based modeling, circuit simulation,
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1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation Shizunori MATSUMOTO Hiroaki UENO Satoshi HOSOKAWA Toshihiko KITAMURA Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/02/01 Vol. E88-C No. 2 pp. 247-254 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: 100 nm-MOSFET, 1/f noise, measurement, modeling,
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100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Keiichi MORIKAWA Satoshi ITOH Akiyoshi KOBAYASHI Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/06/01 Vol. E86-C No. 6 pp. 1009-1021 Type of Manuscript: INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems) Category: Keyword: MOSFET model, surface potential, device phenomena, RF applications,
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FOREWORD Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 pp. 255-255 Type of Manuscript: FOREWORD Category: Keyword:
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Circuit-Simulation Model of C_gd Changes in Small-Size MOSFETs Due to High Channel-Field Gradients Dondee NAVARRO Hiroaki KAWANO Kazuya HISAMITSU Takatoshi YAMAOKA Masayasu TANAKA Hiroaki UENO Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 pp. 474-480 Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: gate-drain capacitance, surface-potential based modeling, lateral field gradient, pocket-implant technology,
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Circuit Simulation Models for Coming MOSFET Generations Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 2002/04/01 Vol. E85-A No. 4 pp. 740-748 Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa) Category: Keyword: MOSFET model, surface potential, charge based modeling, sub-100 nm technology,
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FOREWORD Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/20 Vol. E82-C No. 6 pp. 789-790 Type of Manuscript: FOREWORD Category: Keyword:
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Worst/Best Device and Circuit Performances for MOSFETs Determined from Process Fluctuations Odin PRIGGE Masami SUETAKE Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/20 Vol. E82-C No. 6 pp. 997-1002 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: MOSFET, performance distribution 2σ, analytical model,
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Unified MOSFET Model for All Channel Lengths down to Quarter Micron Mitiko MIURA-MATTAUSCH Ulrich WEINERT
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/20 Vol. E75-C No. 2 pp. 172-180 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: analytical MOSFET model, short-channel effects, charge-sheet model, parameter extracion,
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