Masatoshi MORIKAWA

Development of High Efficiency RF Power MOSFET for GSM Cellular Phone System
Yuri KUSAKARI  Masatoshi MORIKAWA  Kazunori ONOZAWA  Iwamichi KOHJIRO  Isao YOSHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7  pp. 1436-1442
Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
GSM,  RF power MOSFET,  0.45-µm LSI process,  power-added efficiency, 
  Summary |  Full Text:PDF (1.1MB)
Estimations of Emitter Crowding Effect and Emitter Gummel Number of Amorphous SiC: H Emitter HBT
Kimihiro SASAKI  Masatoshi MORIKAWA  Seijiro FURUKAWA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/20
Vol. E69-E  No. 4  pp. 241-242
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits
Keyword: 
  Summary |  Full Text:PDF (142.4KB)