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Masanori ITOH

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate Hideyuki OKITA Toshiharu MARUI Shinichi HOSHI Masanori ITOH Fumihiko TODA Yoshiaki MORINO Isao TAMAI Yoshiaki SANO Shohei SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 686-690 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: AlGaN/GaN HEMTs, current collapse, SiN, passivation film, thermal CVD,
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Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs Toshiharu MARUI Shinich HOSHI Masanori ITOH Isao TAMAI Fumihiko TODA Hideyuki OKITA Yoshiaki SANO Shohei SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1009-1014 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: AlGaN/GaN HEMTs, thermal CVD SiN, current collapse, passivation film, gate insulator,
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Influence of NH₃-Plasma Pretreatment before Si₃N₄ Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs Shinichi HOSHI Toshiharu MARUI Masanori ITOH Yoshiaki SANO Shouhei SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 1052-1056 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN-HEMTs, current collapse, Si₃N₄ passivation film, NH₃-plasma pretreatment,
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