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Masami TOKUMITSU

InP HEMT Technology for High-Speed Logic and Communications Tetsuya SUEMITSU Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 917-922 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: HEMT, InP, cutoff frequency, OEIC,
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Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs Hideaki MATSUZAKI Takashi MARUYAMA Takatomo ENOKI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 949-953 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Millimeter-Wave Devices Keyword: HEMT, InP, InGaAs, InAlAs, lattice-matched, current gain cutoff frequency,
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A 24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation Hideyuki NOSAKA Makoto NAKAMURA Kimikazu SANO Minoru IDA Kenji KURISHIMA Tsugumichi SHIBATA Masami TOKUMITSU Masahiro MURAGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/06/01 Vol. E88-C No. 6 pp. 1225-1232 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Optical Keyword: analog-digital conversion, digital signal processing, equalizers, InP HBT, chromatic dispersion, polarization-mode dispersion, OC-192,
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Quick Development of Multifunctional MMICs by Using Three-Dimensional Masterslice MMIC Technology Ichihiko TOYODA Makoto HIRANO Masami TOKUMITSU Yuhki IMAI Kenjiro NISHIKAWA Kenji KAMOGAWA Suehiro SUGITANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/11/20 Vol. E82-C No. 11 pp. 1951-1959 Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century) Category: Low Power-Consumption RF ICs Keyword: three-dimensional, MMIC, masterslice, LMDS, quick development, down-converter,
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A 22-Gbit/s Static Decision IC Made with a Novel D-Type Flip-Flop Koichi NARAHARA Taiichi OTSUJI Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/20 Vol. E82-C No. 3 pp. 559-561 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: decision IC, GaAs MESFET, static D-FF, SCFL circuitry,
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A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs Koichi MURATA Taiichi OTSUJI Mikio YONEYAMA Masami TOKUMITSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/12/20 Vol. E80-C No. 12 pp. 1624-1627 Type of Manuscript: LETTER Category: Electronic Circuits Keyword: decision IC, MESFET, super-dynamic D-FF, wideband amplifier,
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A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/20 Vol. E78-C No. 9 pp. 1189-1194 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: WSiN, refractory metal, frequency divider, GaAs MESFET, BP-LDD,
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A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/08/20 Vol. E78-C No. 8 pp. 907-910 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology) Category: Keyword: WSiN, InGaP, asymmetric LDD structure, GaAs, MMIC,
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Three-Dimensional Passive Elements for Compact GaAs MMICs Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/06/20 Vol. E76-C No. 6 pp. 961-967 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions) Category: Keyword: three-dimensional, passive elements, GaAs, MMICs,
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A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/12/20 Vol. E74-C No. 12 pp. 4136-4140 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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BP-LDD n⁺ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/12/20 Vol. E74-C No. 12 pp. 4131-4135 Type of Manuscript: Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices) Category: Keyword:
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