Masakatsu MIHARA

Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications
Yoshiko Matsuo IKEDA  Masami NAGAOKA  Hirotsugu WAKIMOTO  Toshiki SESHITA  Masakatsu MIHARA  Misao YOSHIMURA  Yoshikazu TANABE  Keiji OYA  Yoshiaki KITAURA  Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/20
Vol. E82-C  No. 7  pp. 1086-1091
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
gallium arsenide,  linear power amplifier,  single voltage supply,  MESFET,  ISM,  ETC, 
  Summary |  Full Text:PDF (2.7MB)
A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI  Atsushi KAMEYAMA  Yoshiaki KITAURA  Yoshikazu TANABE  Masakatsu MIHARA  Misao YOSHIMURA  Mayumi HIROSE  Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/20
Vol. E80-C  No. 12  pp. 1586-1591
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFET,  buried channel,  ion-implantation,  MMIC,  power-added efficiency,  noise figure, 
  Summary |  Full Text:PDF (552.2KB)