Masahiro ASADA


Phase Locking and Frequency Tuning of Resonant-Tunneling-Diode Terahertz Oscillators
Kota OGINO Safumi SUZUKI Masahiro ASADA 
Publication:   
Publication Date: 2018/03/01
Vol. E101-C  No. 3  pp. 183-185
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
terahertz oscillatorresonant tunneling diodefrequency tuningphase locked loop
 Summary | Full Text:PDF(617.1KB)

Power Combination in 1 THz Resonant-Tunneling-Diode Oscillators Integrated with Patch Antennas
Kouhei KASAGI Naoto OSHIMA Safumi SUZUKI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/12/01
Vol. E98-C  No. 12  pp. 1131-1133
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
terahertzresonant tunneling diodeoscillatorpatch antennaarray
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Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
Atsushi TERANISHI Safumi SUZUKI Kaoru SHIZUNO Masahiro ASADA Hiroki SUGIYAMA Haruki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/03/01
Vol. E95-C  No. 3  pp. 401-407
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
resonant tunneling diodesterahertz oscillatorgraded emittercollector transit time
 Summary | Full Text:PDF(2MB)

An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor
Katsumi FURUYA Takeyoshi SUGAYA Kazuhiro KOMORI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Communications
Publication Date: 2008/06/01
Vol. E91-B  No. 6  pp. 1800-1805
Type of Manuscript:  Special Section PAPER (Special Section on 2007 International Symposium on Antennas and Propagation)
Category: Antennas
Keyword: 
terahertzNegative differential resistance-Dual channel transistorultra-high frequency oscillatorslit-reflectorslot antenna
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Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes
Masahiro ASADA Naoyuki ORIHASHI Safumi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 965-971
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
resonant tunneling diodeterahertz and sub-terahertz oscillationslot antennavoltage-controlled oscillationtransit time
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Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
Masafumi TSUTSUI Toshiaki NAGAI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1191-1199
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
vertical transistorSchottky barrierSchottky source/drain transistorPtSisilicide
 Summary | Full Text:PDF(400.5KB)

Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon
Wataru SAITOH Katsuyuki YAMAZAKI Masafumi TSUTSUI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12  pp. 1918-1925
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
tunneling field effect transistorheterostructure on SiCoSi2/Si/CdF2/CaF2short channel device
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Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range
Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1537-1542
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
resonant tunnelingphoton-assisted tunnelingbeat of electron wavesthree-terminal deviceterahertz frequency amplification
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Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111)
Masahiro WATANABE Fumitaka IIZUKA Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1562-1567
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
nanocrystalline siliconquantum size effectvisible light emissionsemiconductor-insulator heterostructure
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Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
Takashi SUEMASU Yoshifumi KOHNO Nobuhiro SUZUKI Masahiro WATANABE Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1450-1454
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
resonant tunneling transistormetal-insulator heterostructureCaF2CoSi2transfer efficiency
 Summary | Full Text:PDF(554.8KB)

Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure
Tomoaki SAKAGUCHI Masahiro WATANABE Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/10/25
Vol. E74-C  No. 10  pp. 3326-3333
Type of Manuscript:  PAPER
Category: Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(612.6KB)

Permissible Optical Input Power in a Semiconductor Optical Switch/Modulator Using Electric Field Effect
Kazuhiko SHIMOMURA Masahiro ASADA Shigehisa ARAI 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1990/04/25
Vol. E73-E  No. 4  pp. 491-493
Type of Manuscript:  Special Section LETTER (Special Issue on 1990 Spring National Convention IEICE)
Category: Optoelectronics and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(233.8KB)

Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch
Katsuaki MATSUBARA K.G. RAVIKUMAR Masahiro ASADA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1989/11/25
Vol. E72-E  No. 11  pp. 1179-1181
Type of Manuscript:  LETTER
Category: Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(208.8KB)

Proposal of Space Charge Limited Insulator Tetroide with High-Speed Response Using Metal and Insulator
Yasuyuki CHAKI Tomoaki SAKAGUCHI Masahiro ASADA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1989/04/25
Vol. E72-E  No. 4  pp. 313-314
Type of Manuscript:  Special Section LETTER (Special Issue on 1989 Spring National Convention IEICE)
Category: Electronic Devices
Keyword: 
 Summary | Full Text:PDF(150.2KB)

Analysis of Layer Number Dependence of Response Time and Current Gain of Resonant Electron Transfer Triode
Yasuyuki NAKATA Masahiro ASADA Yasuharu SUEMATSU Mitsunobu SATO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 305-307
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Compound Semiconductor Devices
Keyword: 
 Summary | Full Text:PDF(153.9KB)

Intersectional Waveguide Type Optical Switch with Quantum Well Structure
Hiroaki YAMAMOTO Masahiro ASADA Yasuharu SUEMATSU 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/11/25
Vol. E68-E  No. 11  pp. 737-739
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(196.2KB)

Theoretical Linewidth Enhancement Factor α of GaInAs/InP Lasers
Masahiro ASADA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/08/25
Vol. E68-E  No. 8  pp. 518-520
Type of Manuscript:  LETTER
Category: Optical and Quantum Electronics
Keyword: 
 Summary | Full Text:PDF(182.7KB)