Masafumi TSUTSUI


Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
Masafumi TSUTSUI Toshiaki NAGAI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1191-1199
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
vertical transistorSchottky barrierSchottky source/drain transistorPtSisilicide
 Summary | Full Text:PDF(400.5KB)

Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon
Wataru SAITOH Katsuyuki YAMAZAKI Masafumi TSUTSUI Masahiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12  pp. 1918-1925
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
tunneling field effect transistorheterostructure on SiCoSi2/Si/CdF2/CaF2short channel device
 Summary | Full Text:PDF(662.3KB)