Kuniyuki KAKUSHIMA

Equivalent Noise Temperature Representation for Scaled MOSFETs
Hiroshi SHIMOMURA  Kuniyuki KAKUSHIMA  Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10  pp. 1550-1552
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETs,  thermal noise,  equivalent noise temperature, 
  Summary |  Full Text:PDF (272.7KB)
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs
Hiroshi SHIMOMURA  Kuniyuki KAKUSHIMA  Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 678-684
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETs,  thermal noise,  noise figure,  noise parameters, 
  Summary |  Full Text:PDF (4.1MB)
Parasitic Effects in Multi-Gate MOSFETs
Yusuke KOBAYASHI  C. Raghunathan MANOJ  Kazuo TSUTSUI  Venkanarayan HARIHARAN  Kuniyuki KAKUSHIMA  V. Ramgopal RAO  Parhat AHMET  Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10  pp. 2051-2056
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
multi-gate,  Fin-FETs,  high-K dielectric,  fringe capacitance,  parasitic effect, 
  Summary |  Full Text:PDF (463KB)