Kousuke MIYAJI

Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor
Kousuke MIYAJI  Kentaro HONDA  Shuhei TANAKAMARU  Shinji MIYANO  Ken TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 564-571
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
6T/8T-SRAM,  asymmetric pass gate transistor,  local electron injection,  disturb/write margin,  read speed, 
  Summary |  Full Text:PDF (4.5MB)
Initialize and Weak-Program Erasing Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive
Kousuke MIYAJI  Ryoji YAJIMA  Teruyoshi HATANAKA  Mitsue TAKAHASHI  Shigeki SAKAI  Ken TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 609-616
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
ferroelectric FET,  NAND flash memory,  solid-state drive,  bit-by-bit verifying technique,  history effect, 
  Summary |  Full Text:PDF (1.8MB)