Kazutomi MORI


On-Chip Temperature Compensation Active Bias Circuit Having Tunable Temperature Slope for GaAs FET MMIC PA
Shintaro SHINJO  Kazutomi MORI  Tomokazu OGOMI  Yoshihiro TSUKAHARA  Mitsuhiro SHIMOZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Vol. E94-C  No. 10  pp. 1498-1507
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
Keyword: 
temperature compensationMMIC power amplifiersGaAs FETthreshold voltage
  Summary |  Full Text:PDF (2.3MB)

Analog Pre-Distortion Linearizer Using Self Base Bias Controlled Amplifier
Shintaro SHINJO  Kazutomi MORI  Keiki YAMADA  Noriharu SUEMATSU  Mitsuhiro SHIMOZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/07/01
Vol. E93-C  No. 7  pp. 966-974
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
distortionenvelopelinearizermicrowavepower amplifiersilicon
  Summary |  Full Text:PDF (2.3MB)

A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals
Shintaro SHINJO  Kazutomi MORI  Hiro-omi UEDA  Akira OHTA  Hiroaki SEKI  Noriharu SUEMATSU  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8  pp. 1444-1450
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
microwavepower amplifierheterojunction bipolar transistor (HBT)inductor base feedresistor base feed
  Summary |  Full Text:PDF (1.6MB)

An L-Band High Efficiency and Low Distortion Multi-Stage Amplifier Using Self Phase Distortion Compensation Technique
Yukio IKEDA  Kazutomi MORI  Shintaro SHINJO  Fumimasa KITABAYASHI  Akira OHTA  Tadashi TAKAGI  Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 1967-1972
Type of Manuscript: Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
microwaveamplifiertransistorPHEMTdistortionefficiency
  Summary |  Full Text:PDF (1.1MB)

Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit
Shintaro SHINJO  Kazutomi MORI  Hiroyuki JOBA  Noriharu SUEMATSU  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/07/01
Vol. E85-C  No. 7  pp. 1404-1411
Type of Manuscript: Special Section PAPER (Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Category: 
Keyword: 
microwavepower amplifierheterojunction bipolar transistor (HBT)SiGebias circuit
  Summary |  Full Text:PDF (1.3MB)

A Large-Signal Simulation Program for Multi-Stage Power Amplifier Modules by Using a Novel Interpolation
Kazuhisa YAMAUCHI  Morishige HIEDA  Kazutomi MORI  Koji YAMANAKA  Yoshitada IYAMA  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/07/01
Vol. E84-C  No. 7  pp. 891-897
Type of Manuscript: Special Section PAPER (Special Issue on Techniques for Constructing Microwave Simulators--Design and Analysis Tools for Electromagnetic Fields, Circuits, and Antennas--)
Category: Modeling of Nonlinear Microwave Circuits
Keyword: 
microwaveamplifier modulelarge-signal characteristicsmulti-stageinterpolation
  Summary |  Full Text:PDF (1015.3KB)

An Efficient Large-Signal Modeling Method Using Load-Line Analysis and Its Application to Non-linear Characterization of FET
Yukio IKEDA  Kazutomi MORI  Masatoshi NAKAYAMA  Yasushi ITOH  Osami ISHIDA  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/07/01
Vol. E84-C  No. 7  pp. 875-880
Type of Manuscript: Special Section PAPER (Special Issue on Techniques for Constructing Microwave Simulators--Design and Analysis Tools for Electromagnetic Fields, Circuits, and Antennas--)
Category: Modeling of Nonlinear Microwave Circuits
Keyword: 
microwaveamplifierFETmodelingnonlinear analysis
  Summary |  Full Text:PDF (1.1MB)

A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT
Kazutomi MORI  Kenichiro CHOUMEI  Teruyuki SHIMURA  Tadashi TAKAGI  Yukio IKEDA  Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1913-1920
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
microwaveamplifierefficiencylayoutheterojunction bipolar transistormultifinger
  Summary |  Full Text:PDF (1.7MB)

A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model
Kenichi HORIGUCHI  Kazuhisa YAMAUCHI  Kazutomi MORI  Masatoshi NAKAYAMA  Yukio IKEDA  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/20
Vol. E82-C  No. 5  pp. 737-743
Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
distortionanalysisFET amplifiersfrequency characteristicscomplex power seriesnonlinear
  Summary |  Full Text:PDF (590.9KB)

A Calculation Method of Large-Signal Characteristics of Multi-Stage Power Amplifier Modules Using Source-Pull and Load-Pull Data
Kazutomi MORI  Yasushi ITOH  Katsuya KOMURO  Tadashi TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/20
Vol. E81-C  No. 6  pp. 904-910
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
microwavesolid state power amplifiermulti-stage power amplifiercalculation method
  Summary |  Full Text:PDF (558.9KB)

Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance
Kazutomi MORI  Kazuhisa YAMAUCHI  Masatoshi NAKAYAMA  Yasushi ITOH  Tadashi TAKAGI  Hidetoshi KUREBAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 775-781
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
microwaveamplifierlinearizerintermodulation distortionadjacent chamel leakage power
  Summary |  Full Text:PDF (477.2KB)

High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
Teruyuki SHIMURA  Takeshi MIURA  Yutaka UNEME  Hirofumi NAKANO  Ryo HATTORI  Mutsuyuki OTSUBO  Kazutomi MORI  Akira INOUE  Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/20
Vol. E80-C  No. 6  pp. 740-745
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction bipolar transistordigital cellular phoneindividual thermal shuntemitter air-bridgebias mode
  Summary |  Full Text:PDF (590KB)

Direct Efficiency and Power Calculation Method and Its Application to Low Voltage High Efficiency Power Amplifier
Kazutomi MORI  Masatoshi NAKAYAMA  Yasushi ITOH  Satoshi MURAKAMI  Yasuharu NAKAJIMA  Tadashi TAKAGI  Yasuo MITSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/20
Vol. E78-C  No. 9  pp. 1229-1236
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
calculation methodamplifierMMIChigh efficiencyhigh powerlow-voltage
  Summary |  Full Text:PDF (722.5KB)