Kazunao SATO

High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones
Akira INOUE  Akira OHTA  Takahiro NAKAMOTO  Shigeki KAGEYAMA  Toshiaki KITANO  Hideaki KATAYAMA  Toshikazu OGATA  Noriyuki TANINO  Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1906-1912
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
microwave power amplifier,  microwave power transistor,  power efficiency, 
  Summary |  Full Text:PDF
A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
Seiki GOTO  Kenichi FUJII  Tetsuo KUNII  Satoshi SUZUKI  Hiroshi KAWATA  Shinichi MIYAKUNI  Naohito YOSHIDA  Susumu SAKAMOTO  Takashi FUJIOKA  Noriyuki TANINO  Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/20
Vol. E82-C  No. 11  pp. 1936-1942
Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
high-power FET,  HFET,  base station,  low distortion,  microwave, 
  Summary |  Full Text:PDF
(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM
Tsuyoshi HORIKAWA  Noboru MIKAMI  Hiromi ITO  Yoshikazu OHNO  Tetsuro MAKITA  Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/20
Vol. E77-C  No. 3  pp. 385-391
Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
(Ba,Sr)TiO3,  ferroelectric,  DRAM,  sputtering,  grain size effect, 
  Summary |  Full Text:PDF