Kazuhiko ENDO


Independent-Double-Gate FinFET SRAM Technology
Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Vol. E96-C  No. 4  pp. 413-423
Type of Manuscript:  INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
multi-gate devicesFinFETSRAMnoise margin
 Summary | Full Text:PDF(2.9MB)

A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
Shin-ichi O'UCHI Kazuhiko ENDO Takashi MATSUKAWA Yongxun LIU Tadashi NAKAGAWA Yuki ISHIKAWA Junichi TSUKADA Hiromi YAMAUCHI Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 686-695
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
Common-Double-Gate FinFETIndependent-Double-Gate FinFETcommon-mode voltage rangelow voltagedifferential amplifiersource follower
 Summary | Full Text:PDF(3.9MB)

High-Frequency Precise Characterization of Intrinsic FinFET Channel
Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4  pp. 752-760
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
FinFETSOIDe-embeddingRFdevice modeling
 Summary | Full Text:PDF(2.2MB)

FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
Shin-ichi O'UCHI Meishoku MASAHARA Kazuhiko ENDO Yongxun LIU Takashi MATSUKAWA Kunihiro SAKAMOTO Toshihiro SEKIGAWA Hanpei KOIKE Eiichi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/04/01
Vol. E91-C  No. 4  pp. 534-542
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories)
Category: 
Keyword: 
SRAMFinFET4T-FinFETstandby powerdynamic threshold-voltage control
 Summary | Full Text:PDF(2.1MB)

Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 30-36
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricaluminum oxideplasma nitridationfixed chargeMOSFET performance
 Summary | Full Text:PDF(953.8KB)