Katsuyoshi WASHIO


Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
Masao KONDO Isao MIYASHITA Tadashi KURAMAOTO Makoto KOSHIMIZU Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4  pp. 455-465
Type of Manuscript:  Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
bipolar transistorSiGe HBTSiGe:Cpower amplifierACPRPAE
 Summary | Full Text:PDF(1.6MB)

DC and AC Performances in Selectively Grown SiGe-Base HBTs
Katsuya ODA Eiji OHUE Masamichi TANABE Hiromi SHIMAMOTO Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2013-2020
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
SiGe HBTUHV/CVDselective epitaxial growthGe profilecurrent gaincutoff frequency
 Summary | Full Text:PDF(558.8KB)

High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology
Hiromi SHIMAMOTO Takahiro ONAI Eiji OHUE Masamichi TANABE Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2007-2012
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
silicon bipolar transistornoise figureoptical communicationwireless communication
 Summary | Full Text:PDF(872KB)

Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors
Masamichi TANABE Hiromi SHIMAMOTO Takahiro ONAI Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 165-171
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
self-aligned bipolar transistorbase resistanceparasitic base resistancespreading resistance
 Summary | Full Text:PDF(572KB)

Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors
Hiromi SHIMAMOTO Masamichi TANABE Takahiro ONAI Katsuyoshi WASHIO Tohru NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 211-218
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Reliability Analysis
Keyword: 
self-aligned bipolar transistorhot-carrieremitter-base reverse voltage stress
 Summary | Full Text:PDF(636.6KB)

Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
Tohru NAKAMURA Takeo SHIBA Takahiro ONAI Takashi UCHINO Yukihiro KIYOTA Katsuyoshi WASHIO Noriyuki HOMMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1154-1164
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
silicon bipolardouble polysiliconhigh speedself-alignment
 Summary | Full Text:PDF(1.1MB)

High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
Katsuyoshi WASHIO Hiromi SHIMAMOTO Tohru NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4  pp. 353-359
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
high-speed high-density self-aligned pnpcomplementary bipolar ULSIshigh-speed and low-power performancefully compatibility with npn
 Summary | Full Text:PDF(639.6KB)